GaAs Mantech 2002

RF Characteristics of GaAs / InGaAsN / GaAs P

We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with ~~ and ~M...

Spin transport through GaAs/GaMnAs/GaAs

This work addresses spin-dependent transport in the heterostructure p-GaAs/GaMnAs/p-GaAs. The diluted ferromagnetic semiconductor GaMnAs layer behaves, within mean field approximation, as a potential well for spin-down carriers and a potential barrier for spin-up ones. Thus the transport would be spin-dependent. The goal of this work is to devise spin filters relevant for spin-dependent optoele...

Cultural psychology, A new look: reply to Bond (2002), Fiske (2002), Kitayama (2002), and Miller (2002).

M. H. Bond (2002), A. P. Fiske (2002), S. Kitayama (2002), and J. G. Miller (2002) joined D. Oyserman, H. M. Coon, and M. Kemmelmeier (2002) in highlighting limitations of the individualism-collectivism model of culture. Concern is warranted; nevertheless, individualism-collectivism helps structure discourse on the influence of culture on the mind. To avoid level-of-analysis entanglements, Oyse...

- 2002

Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers